2N3055(NPN) คัดเกรดพิเศษ

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 7 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 115 0.657 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +200 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.